Dependence of the a.c. conductance of neutron irradiated silicon detectors on frequency and temperature

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 386, Issue 1, 1997, Pages 156-161

  Croitoru, N ^a,b   David, G ^a   Rancoita, P G ^a   Rattaggi, M ^a   Seidman, A ^a,b  

^a INFN SEZIONE DI MILANO   (Italy)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

Frequency dependence; Neutron fluence; Radiation damage; Silicon detector; Silicon detector admittance; Temperature dependence

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRIC RESISTANCE; NEUTRON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTING SILICON; TEMPERATURE; THERMAL EFFECTS;

FREQUENCY DEPENDENCE; SILICON DETECTORS; TEMPERATURE DEPENDENCE;

RADIATION DETECTORS;

EID: 0031074140     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)01111-4     Document Type: Article

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