Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling

IEEE Transactions on Electron Devices

Volumn 52, Issue 9, 2005, Pages 2061-2066

  Wu, Jun Wei ^a   You, Jian Wen ^b   Ma, Huan Chi ^a   Cheng, Chih Chang ^a   Hsu, Chang Feng ^a   Chang, Chih Sheng ^c   Huang, Gou Wei ^d   Wang, Tahui ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Low frequency noise; Random telegraph signal; Ultrathin oxide MOSFET; Valence band tunneling

Indexed keywords

ELECTRON TRAPS; ELECTRON TUNNELING; FERMI LEVEL; HOLE TRAPS; MATHEMATICAL MODELS; POLYSILICON; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE;

LOW-FREQUENCY NOISE; RANDOM TELEGRAPH SIGNAL; ULTRATHIN OXIDE MOSFET; VALENCE-BAND TUNNELING;

MOSFET DEVICES;

EID: 26244465685     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.854264     Document Type: Article

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