Low frequency noise degradation in ultra-thin oxide (15Å) analog n-MOSFETs resulting from valence-band tunneling

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 260-264

  Wu, J W ^a   You, J W ^a   Ma, H C ^a   Cheng, C C ^a   Hsu, C F ^a   Huang, G W ^b   Chang, C S ^c   Wang, Tahui ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Flicker noise; n MOSFET; Random telegraph signal; Trap emission and capture times; Valence band tunneling

Indexed keywords

FLICKER NOISE; N-MOSFET; RANDOM TELEGRAPH SIGNALS; TRAP EMISSION AND CAPTURE TIMES; VALANCE-BAND TUNNELING;

ELECTRIC POTENTIAL; ELECTRON TUNNELING; FERMI LEVEL; GATES (TRANSISTOR); INTERFACES (MATERIALS); SILICON; SPURIOUS SIGNAL NOISE; TELEGRAPH;

MOSFET DEVICES;

EID: 26244451523     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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