An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 1 A/B, 2001, Pages

  Chen, Y J ^a   Chen, Y W ^a   Lin, Y S ^a   Yeh, C Y ^a   Li, Y J ^a   Hsu, W C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

CD HFET; HEMT; LP MOCVD

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET);

HETEROJUNCTIONS;

EID: 0035862507     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l7     Document Type: Article

References (12)