A novel InAlAs/InGaAs two-terminal real-space transfer diode

IEEE Electron Device Letters

Volumn 17, Issue 2, 1996, Pages 43-45

  Su, Jan Shing ^b   Hsu, Wei Chou ^a,b   Lin, Yu Shyan ^b   Lin, Wei ^c   Wu, Chang Luen ^a   Tsai, Ming Shang ^b   Wu, Yu Huei ^b  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c Ministry of Transportation and Communications Taiwan   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEGATIVE RESISTANCE; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

CARRIER DENSITY MODULATION; NEGATIVE DIFFERENTIAL RESISTANCE; OHMIC ELECTRODES; PEAK TO VALLEY CURRENT RATIO; REAL SPACE TRANSFER DIODES; SHARP CHARGE INJECTION;

SEMICONDUCTOR DIODES;

EID: 0030083944     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.484118     Document Type: Article

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