High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 74, Issue 23, 1999, Pages 3495-3497

  Chang, J R ^a   Su, Y K ^a   Lin, C L ^a   Wu, K M ^a   Lu, Y T ^a   Jaw, D H ^b   Shiao, H P ^c   Lin, W ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

^c CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

CONDUCTION-BAND OFFSET RATIO;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032621735     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124141     Document Type: Article

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