Cross-sectional cleavages of SiC for evaluation of epitaxial layers

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 409-415

  Syvajarvi M ^a   Yakimova, R ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SURFACE STRUCTURE;

CROSS SECTIONAL CLEAVAGES;

SEMICONDUCTING FILMS;

EID: 12944317522     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00484-4     Document Type: Article

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