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Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 3090-3092

Study of quantum well intermixing caused by grown-in defects

(4) Haysom, J E a Aers, G C a Raymond, S a Poole, P J a

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; MIXING; QUANTUM WELL LASERS; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CONTROL WAFERS; EMISSION ENERGIES; EPITAXIAL LAYER STRUCTURES; LIGHT-HOLE TRANSITIONS; LOWER TEMPERATURES; QUANTUM WELL INTERMIXING; THERMALLY INDUCED; TRANSMISSION MEASUREMENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0001375775 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.1287406 Document Type: Letter

Times cited : (27)

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