Study of misfit dislocations by EBIC, CL and HRTEM in GaAs/InGaAs lattice-strained multi-quantum well p-i-n solar cells

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 43-51

  Mazzer, M ^a,d   Grunbaum E ^b,e   Barnham, K W J ^a   Barnes, J ^a   Griffin, P R ^a   Holt, D B ^a   Hutchison, J L ^b   Norman, A G ^b   David, J P R ^c   Roberts, J S ^c   Grey, R ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d CNR   (Italy)

^e TEL AVIV UNIVERSITY   (Israel)

Author keywords

Cathodoluminescence; Electron beam induced current; High resolution transmission electron microscopy; Misfit dislocations; Multi quantum well structures

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; INDUCED CURRENTS; LATTICE CONSTANTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SOLAR CELLS; STACKING FAULTS; STRESS RELAXATION;

DARK LINE DENSITY; ELECTRON BEAM INDUCED CURRENTS (EBIC); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030414739     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01681-9     Document Type: Article

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