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Volumn 53, Issue 1, 2000, Pages 349-352
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Study of electron forward scattering effects on the footwidth of T-gates fabricated using a bilayer of PMMA and UVIII
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
ELECTRON BEAM LITHOGRAPHY;
GATES (TRANSISTOR);
INTEGRATED CIRCUIT MANUFACTURE;
MONTE CARLO METHODS;
PHOTORESISTS;
POLYMETHYL METHACRYLATES;
SEMICONDUCTING GALLIUM ARSENIDE;
ELECTRON FORWARD SCATTERING EFFECTS;
ELECTRON FORWARD SCATTERING IN THE HEAD LAYER;
ENERGY DISTRIBUTION FUNCTION;
ELECTRON SCATTERING;
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EID: 0034207249
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/S0167-9317(00)00331-2 Document Type: Article |
Times cited : (7)
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References (14)
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