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Volumn 78, Issue 25, 2001, Pages 3992-3994

Electroluminescence from a forward-biased Schottky barrier diode on modulation Si δ-doped GaAs/InGaAs/AIGaAs heterostructure

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[No Author keywords available]

Indexed keywords


EID: 17844380246     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1380397     Document Type: Article
Times cited : (7)

References (15)
  • 1
    • 0003546026 scopus 로고
    • Clarendon, Oxford
    • For the properties of Schottky barriers see E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Clarendon, Oxford, 1988); H. K. Henisch, Semiconductor Contacts (Clarendon, Oxford, 1984).
    • (1988) Metal-Semiconductor Contacts
    • Rhoderick, E.H.1    Williams, R.H.2
  • 2
    • 0004061295 scopus 로고
    • Clarendon, Oxford
    • For the properties of Schottky barriers see E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Clarendon, Oxford, 1988); H. K. Henisch, Semiconductor Contacts (Clarendon, Oxford, 1984).
    • (1984) Semiconductor Contacts
    • Henisch, H.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.