Optical spectra of low-dimensional semiconductors

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

Volumn 22, Issue 6, 2003, Pages 401-405

  Fu, Y ^a   Chiragwandi, Z ^a   Goteborg P ^a   Willander, M ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Low dimensional semiconductor; Optical gain; Optical spectrum; Population inversion.

Indexed keywords

SEMICONDUCTOR DEVICES; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

LOW DIMENSIONALSEMICONDUCTORS; OPTICAL GAINS; OPTICAL SPECTRA; POPULATION INVERSION;

LIGHT EMITTING DIODES;

EID: 1642602960     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

1. Nalwa H S. Handbook of Advanced Electronic and Photonic Materials and Devices. San Diego: Academic Press San Diego, 2000.
2. Kim S, Razeghi M. Chapter 3 Recent advances in quantum dot optoelectronic devices and future trends, Nalwa H S, In Handbook of Advanced Electronic and Photonic Materials and Devices. San Diego. Academic Press San Diego, 2000, 2: 133-154.
3. 1-xAs quantum well infrared photodetector hand-held camera. IEEE. Trans. Electron Devices, 1997, 44: 51-57.
4. Asada M, Miyamoto Y, Suematsu Y. Gain and the threshold of three-dimensional quantum-box lasers, J. Quantum Electronics, 1986, 22: 1915-1921.
5. Fu Y, Willander M, Li Z F. et al. Dimensionality of photo-luminescence spectrum of GaAs/AlGaAs system. J. Appl. Phys, 2001, 89: 5112-5116.
6. Fu Y, Willander M, Xu Wenlan. Optical absorption coefficients of semiconductor quantum-well infrared detectors. J. Appl. Phys, 1995, 77: 4648-4654.
7. Fu Y, Zhao Q X, Ferdos F, et al. Strain and optical transitions in InAs quantum dots on (001) GaAs. Superlattices and Microstructures, 2001, 30: 205-213.
8. Madelung 0. Semiconductors Group IV Elements and III-V Compounds. Berlin: Springer-Verlag, 1991, 134.
9. Coldren L A, Corzine S W. Diode Lasers and Photonic InteGrated Circuits. New York: John Wiley and Sons Inc. 1995, 130.
10. Yamada M, Ishiguro H. Gain calculation of undoped GaAs injection laser taking into account of electron intra-band relaxation, Jpn. J. Appl. Phys., 1981, 20: 1279-1288.
11. Yamanishi M, Lee Y. Phase dampings of optical dipole moments and gain spectra in semiconductor lasers. IEEE J. Quantum Electronics, 1987, 23: 367-370.
12. Chinn S R, Zory P, Reisinger A R. A model for GRIN-SCH-SQW diode lasers. IEEE J. Quantum Electronics, 1988, 24: 2191-2194.
13. Kucharska A I, Robbins D J. Lifetime broadening in GaAs-AlGaAs quantum well lasers. IEEE J. Quantum Electronics, 1990, 26: 443-448.
14. Asada M. Chapter 2 Intraband relaxation effect on optical spectra, In P. S. Zory Quantum Well Lasers. Jr., San Diego: Academic Press San Diego, 1993.