Field-emission characteristics of a silicon tip defined by oxygen precipitate

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Kanechika, Masakazu ^a   Sugimoto, Noriaki ^a   Mitsushima, Yasuichi ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMITTING AREAS; ETCHING MASKS; FIELD EMISSION DEVICES; SILICON TIPS;

ANISOTROPY; DRY ETCHING; ELECTRIC POTENTIAL; FIELD EMISSION DISPLAYS; GATES (TRANSISTOR); OXYGEN; PRECIPITATION (CHEMICAL); SUBSTRATES;

SEMICONDUCTING SILICON;

EID: 25144474891     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2039272     Document Type: Article

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