A gated field emission triode using silicon needles fabricated by highly selective anisotropic dry etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 5 A, 2002, Pages 3076-3080

  Kanechika, Masakazu ^a   Sugimoto, Noriaki ^a   Mitsushima, Yasuichi ^a  

^a Rd Management Section   (Japan)

Author keywords

Anisotropic dry etching; Field emission; Highly selective; Needle; Silicon; Triode; Vacuum microelectronics

Indexed keywords

ANISOTROPY; ANODES; CMOS INTEGRATED CIRCUITS; DRY ETCHING; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MASKS; MICROELECTRONICS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SUBSTRATES; VACUUM APPLICATIONS;

GATED FIELD EMISSION TRIODES;

TRIODES;

EID: 0036578063     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.3076     Document Type: Article

References (5)