Si field emitter array with 90-nm-diameter gate holes

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 859-862

  Takemura, Hisashi ^a   Yoshiki, Masayuki ^a   Furutake, Naoya ^a   Tomihari, Yoshinori ^a   Okamoto, Akihiko ^a   Miyano, Soichiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; ELECTROCHEMICAL ELECTRODES; ELECTRON SOURCES; GATES (TRANSISTOR); THRESHOLD VOLTAGE;

FIELD EMITTER ARRAYS (FEA);

FIELD EMISSION CATHODES;

EID: 0032255801     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)