Fabrication of Si field emitter arrays integrated with metal-oxide-semiconductor field-effect transistor driving circuits

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2309-2313

  Nagao, M ^a   Tamura, Y ^a   Matsukawa, T ^a   Kanemaru, S ^a   Itoh, J ^a   Tokunaga, K ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; ION IMPLANTATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THERMOOXIDATION;

EMISSION CONTROL; FIELD EMISSION ARRAY; FIELD EMISSION DISPLAY; LOCAL OXIDATION OF SILICON;

MOSFET DEVICES;

EID: 0036883082     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1520553     Document Type: Article

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