Effects of electron-electron and electron-phonon scatterings on the linewidths of intersubband transitions in a quantum well

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 12, 2004, Pages

  Li, J ^a   Ning, C Z ^a  

^a NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ELECTRON; ELECTRON TRANSPORT; PHONON; QUANTUM MECHANICS; SEMICONDUCTOR; THEORETICAL MODEL;

EID: 19744382306     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.125309     Document Type: Article

References (36)

1. Intersubband Transitions in Quantum Wells: Physics and Device Application I, edited by H. C. Liu and F. Capasso (Academic Press, San Diego, 2000).
2. K. K. Choi, The Physics of Quantum Well Infrared Photodetectors (World Scientific, Singapore, 1997).
3. H. Haug and S. W. Koch, Theory of the Electrical and Optical Properties of Semiconductors (World Scientific, Singapore, 1994).
4. W. W. Chow and S. W. Koch, Semiconductor-Laser Fundamentals (Springer-Verlag, Berlin-Heidelberg, 1999).
5. M. Lindberg and S. W. Koch, Phys. Rev. B 38, 3342 (1988).
6. F. Rossi, S. Haas, and T. Kuhn, Phys. Rev. Lett. 72, 152 (1994).
7. T. Rappen, U.-G. Peter, M. Wegener, and W. Schaefer, Phys. Rev. B 49, 10 774 (1994).
8. A. Girndt, F. Jahnke, A. Knorr, S. W. Koch, and W. W. Chow, Phys. Status Solidi B 202, 725 (1997).
9. F. Jahnke, M. Kira, and S. W. Koch, Z. Phys. B: Condens. Matter 104, 559 (1997).
10. W. W. Chow, A. Knorr, S. Hughes, A. Girndt, and S. W. Koch, IEEE J. Sel. Top. Quantum Electron. 3, 136 (1997).
11. C. Z. Ning, R. Indik, J. Moloney, W. W. Chow, A. Girndt, S. W. Koch, and R. Binder, Proc. SPIE 2994, 666 (1997).
12. M. W. Wu and H. Metiu, Phys. Rev. B 61, 2945 (2000).
13. M. W. Wu and C. Z. Ning, Phys. Status Solidi B 222, 523 (2000).
14. J. Li and C. Z. Ning, Conference-Workbook, The 15th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-15) July 14-18, 793 (2003).
15. I. Waldenmueller, J. Foerstner, and A. Knorr, in Nonequilibrium Physics at Short Time Scales, edited by K. Morawetz (Springer, Berlin, 2004).
16. After the completion of this work, we received the preprint by Waldenmueller et al. (Ref. 15). The theory developed by these authors is equivalent to the one we use here at the level of Hartree-Fock and the second Born approximation. Some of the effects studied in more detail were mentioned briefly there, such as the possibility of complete cancellation of in- and out-scatterings and the nonadditiveness of the e-e and e-ph scatterings. We thank the authors for sending us the preprint before publication. Some preliminary results of this paper were reported at the 15th EP2DS in Kyoto (see Ref. 14).
17. T. Kuhn, in Theory of Transport Properties of Semiconductor Nanostructures, Chap. 6, edited by E. Schöll (Chapman & Hall London, 1998).
18. M. Lindberg and S. W. Koch, Phys. Rev. B 38, 3342 (1988).
19. G. D. Mahan, Many-Particle Physics (Plenum Press, New York, 1981).
20. D. E. Nikonov et al., Phys. Rev. Lett. 79, 4633 (1997).
21. J. Li and C. Z. Ning, Phys. Rev. Lett. 91, 097401 (2003).
22. M. F. Pereira and H. Wenzel, Microelectron. Eng. 69, 261 (2003).
23. M. F. Pereira, Mater. Sci. Semicond. Process. 6, 149 (2003).
24. H. Haken, Quantum Field Theory of Solids, An Introduction (North Holland, New York, 1976).
25. T. Unuma, T. Noda, M. Yoshita, H. Sasaki, and H. Akiyama, J. Appl. Phys. 93, 1586 (2003).
26. R. J. Warburton et al., Phys. Rev. B 53, 7903 (1996).
27. We deal with a single quantum well in this paper and the spatial nonuniformity within a well is only taken into account by the wavefunctions in dipole moment calculation and by various form factors. The optical suseptibility defined here should be understood in an average sense. More general approaches using a fully z-resolved medium response can be found in Refs. 35 and 36. In Ref. 35, also the difference of dielectric functions of the barrier and well materials was considered in discussing multiple quantum wells.
28. K. Kolokolov, J. Li, and C. Z. Ning, Phys. Rev. B 68, 161308 (2003).
29. M. W. Wu and C. Z. Ning, Eur. Phys. J. B 18, 373 (2000).
30. T. Ando, Z. Phys. B 24, 33 (1976).
31. D. C. Larrabee, G. A. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, S. Sasa, M. Inoue, K. Kolokolov, J. Li, and C. Z. Ning, Appl. Phys. Lett. 83, 3936 (2003).
32. J. Li, K. I. Kolokolov, C. Z. Ning, D. C. Larrabee, G. A. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, S. Sasa, and M. Inoue, in Progress in Semiconductors II: Electronic and Optoelectronic Applications, edited by B. D. Weaver, M. O. Manasreh, C. C. Jagdishi, and S. Zollner (Materials Research Society, Warrendale, 2003).
33. T. Unuma, T. Takahashi, T. Noda, M. Yoshita, H. Sasaki, M. Baba, and H. Akiyama, Appl. Phys. Lett. 78, 3448 (2001).
34. C. Bolognesi, H. Kroemer, and J. English, J. Vac. Sci. Technol. B 10, 877 (1992).
35. M. Zaluzny and C. Nalewajko, Phys. Rev. B 59, 13 043 (1999).
36. A. Liu, Phys. Rev. B 50, 8569 (1994).