Porous SiC for HT chemical sensing devices: An assessment of its thermal stability

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1479-1482

  Bai, J ^a   Dhanaraj, G ^a   Gouma, P ^a   Dudley, M ^a   Mynbaeva, M ^b  

^a STONY BROOK UNIVERSITY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Chemical sensor; Porous SiC; Thermal stability

Indexed keywords

ANNEALING; ATMOSPHERICS; CHEMICAL MODIFICATION; CHEMICAL SENSORS; DEPOSITION; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; SENSITIVITY ANALYSIS; SILICON CARBIDE; THERMODYNAMIC STABILITY;

CHEMICAL SENSING DEVICES; HIGH TEMPERATURE HEATING; HOMEOEPI-GROWTH; POROUS SILICON CARBIDE;

POROUS SILICON;

EID: 8744272436     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1479     Document Type: Conference Paper

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