Mechanism of primary self-organization in porous silicon with a regular structure

Physics of the Solid State

Volumn 45, Issue 5, 2003, Pages 948-952

  Kompan, M E ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038179588     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1575342     Document Type: Article

References (16)

1. K. Suenaga, Y. Zang, and S. Iijima, Appl. Phys. Lett. 76, 1564 (2000).
2. M. S. Gudiksen, L. J. Lauhon, J. Wang, et al., Nature 415, 617 (2002).
3. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
4. Collection of papers from First International Conference on Porous Semiconductors, J. Porous Mater. 7 (1-3) (2000).
5. D. R. Terner, J. Electrochem. Soc. 105, 402 (1958).
6. K. M. A. El-Kader, J. Ocwald, J. Kocka, and V. Chab, Appl. Phys. Lett. 64, 2555 (1994).
7. M. I. J. Beale, J. D. Benjamin, M. J. Uren, et al., J. Cryst. Growth 73, 622 (1985).
8. M. E. Kompan and I. Yu. Shabanov, Fiz. Tverd. Tela (St. Petersburg) 36, 125 (1994) [Phys. Solid State 36, 68 (1994)].
9. M. E. Kompan and I. Yu. Shabanov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 1859 (1995) [Semiconductors 29, 971 (1995)].
10. A. Valance, Phys. Rev. B 52, 8323 (1995).
11. D. N. Gorjachev, L. V. Beljakov, and O. M. Sreseli, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1130 (1995) [Semiconductors 34, 1090 (2000)].
12. T. Unagami and M. Seki, J. Electrochem. Soc. 125, 1339 (1978).
13. R. L. Smith and S. D. Collins, J. Appl. Phys. 71, R1 (1992).
14. P. Allongue, V. Costa-Keilling, and H. Gerischer, J. Electrochem. Soc. 140, 1009 (1993).
15. M. E. Kompan, I. Yu. Senichenkov, I. Yu. Shabanov, and J. Salonen, http://zhurnal.are.relarn.ru/aiticles/1999/001.pdf.
16. L. D. Landau and E. M. Livshitz, The Classical Theory of Fields, 5th ed. (Nauka, Moscow, 1967; Pergamon, Oxford, 1975).