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Volumn 346, Issue 1-3, 2005, Pages 227-231
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Built-in electric field effect in wurtzite InGaN/GaN coupled quantum dots
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Author keywords
Built in electric field; Coupled quantum dots; Emission energy; Exciton; InGaN; Variational approach
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Indexed keywords
BINDING ENERGY;
ENERGY GAP;
EXCITONS;
GALLIUM ALLOYS;
III-V SEMICONDUCTORS;
INDIUM ALLOYS;
NANOCRYSTALS;
SEMICONDUCTOR ALLOYS;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WELLS;
ZINC SULFIDE;
BUILT-IN ELECTRIC FIELDS;
COUPLED QUANTUM DOTS;
EMISSION ENERGIES;
INGAN;
VARIATIONAL APPROACHES;
ELECTRIC FIELD EFFECTS;
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EID: 24944591881
PISSN: 03759601
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physleta.2005.07.078 Document Type: Article |
Times cited : (24)
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References (23)
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