메뉴 건너뛰기




Volumn 346, Issue 1-3, 2005, Pages 227-231

Built-in electric field effect in wurtzite InGaN/GaN coupled quantum dots

Author keywords

Built in electric field; Coupled quantum dots; Emission energy; Exciton; InGaN; Variational approach

Indexed keywords

BINDING ENERGY; ENERGY GAP; EXCITONS; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; NANOCRYSTALS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; ZINC SULFIDE;

EID: 24944591881     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2005.07.078     Document Type: Article
Times cited : (24)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.