Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor

Journal of Materials Science: Materials in Electronics

Volumn 16, Issue 7, 2005, Pages 437-443

  Toh, B H W ^a   McNeill, D W ^a   Gamble, H S ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPOSITION; COMPOSITION EFFECTS; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; FILM PREPARATION; MORPHOLOGY; NITROGEN; PRESSURE EFFECTS; SUBSTRATES; THERMAL EFFECTS;

COPPER LAYERS; FILM COMPOSITION; FILM RESISTIVITY; PRECURSOR; PROCESS GAS FLOW RATIO;

COPPER;

EID: 24944576540     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10854-005-2311-7     Document Type: Article

References (8)

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