Effects of NH3 plasma treatment of the substrate on metal organic chemical vapor deposition of copper films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 8 SUPPL. B, 1998, Pages

  Kim, Young Suk ^c   Jung, Donggeun ^c   Kim, Dong Joon ^a   Min, Suk Ki ^b  

^a Hanyang University   (South Korea)

^b Korea University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Copper chemical vapor deposition (CVD); NH3 plasma; Nucleation; Preferential orientation; Selective deposition

Indexed keywords

AMMONIA; COPPER; INTERFACIAL ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; NUCLEATION; PLASMA APPLICATIONS; SUBSTRATES; SURFACE TREATMENT;

BOROPHOSPHOSILICATE GLASS; SELECTIVE DEPOSITION;

METALLIC FILMS;

EID: 0032130986     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l991     Document Type: Article

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