Modeling of thermosolutal convection during Bridgman solidification of semiconductor alloys in relation with experiments

Journal of Crystal Growth

Volumn 266, Issue 1-3, 2004, Pages 190-199

  Stelian, Carmen ^a   Duffar, Thierry ^b  

^a WEST UNIVERSITY OF TIMISOARA   (Romania)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

A1. Computer simulation; A1. Segregation; A2. Bridgman technique; A2. Microgravity conditions; B2. Semiconducting III V materials

Indexed keywords

COMPUTER SIMULATION; DAMPING; FINITE ELEMENT METHOD; HEAT CONVECTION; INTERFACES (MATERIALS); MICROGRAVITY PROCESSING; SEGREGATION (METALLOGRAPHY); SOLIDIFICATION;

BRIDGMAN TECHNIQUE; MICROGRAVITY CONDITIONS; SEGREGATION; SEMICONDUCTING III-V MATERIALS; THERMOSOLUTAL CONVECTION;

GALLIUM ALLOYS;

EID: 2342533870     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.045     Document Type: Conference Paper

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