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Volumn 48, Issue 6, 2001, Pages 1264-1269
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Simulation of power heterojunction bipolar transistors on gallium arsenide
a a a |
Author keywords
Electrothermal effects; Heating; Semiconductor device thermal factors; Simulation software
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL LATTICES;
ENERGY GAP;
HYDRODYNAMICS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR MATERIALS;
SPECIFIC HEAT;
THERMAL CONDUCTIVITY;
POWER HETEROJUNCTION BIPOLAR TRANSISTORS;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0035368013
PISSN: 00189383
EISSN: None
Source Type: Journal
DOI: 10.1109/16.925258 Document Type: Article |
Times cited : (46)
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References (21)
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