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Volumn 48, Issue 6, 2001, Pages 1264-1269

Simulation of power heterojunction bipolar transistors on gallium arsenide

Author keywords

Electrothermal effects; Heating; Semiconductor device thermal factors; Simulation software

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; ENERGY GAP; HYDRODYNAMICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; SPECIFIC HEAT; THERMAL CONDUCTIVITY;

EID: 0035368013     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925258     Document Type: Article
Times cited : (46)

References (21)
  • 15
    • 0004812650 scopus 로고
    • Properties of Aluminum Gallium Arsenide
    • (1993) IEE INSPEC


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.