A model for epitaxial lateral overgrowth of GaAs by liquid-phase electroepitaxy

Journal of Crystal Growth

Volumn 265, Issue 3-4, 2004, Pages 341-350

  Liu, Y C ^a   Zytkiewicz, Z R ^a,b   Dost, S ^a  

^a UNIVERSITY OF VICTORIA   (Canada)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

A1. Computer simulation; A2. Epitaxial lateral overgrowth; A3. Electroepitaxy

Indexed keywords

COMPUTATION THEORY; COMPUTER SIMULATION; ELECTRIC CURRENTS; EPITAXIAL GROWTH; ETCHING; HEATING; INTERFACES (MATERIALS); LIQUID PHASE EPITAXY; MASS TRANSFER; MATHEMATICAL MODELS; PHOTOLITHOGRAPHY;

ELECTROEPITAXY; EPITAXIAL LATERAL OVERGROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1942537647     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.016     Document Type: Article

References (33)

1. C.O. Bozler, R.W. McClelland, J.C.C.C. Fan, Proceedings of the eighth Symposium on GaAs and Related Compounds, Vienna, 1980, Institute of Physics, London, 1981 p. 283.
2. McClelland R.W., Bozler C.O., Fan J.C.C.C. Appl. Phys. Lett. 37:1980;556.
3. Jastrzebski L., Corboy J.F., Soydan R. J. Electrochem. Soc. 136:1988;3506.
4. Bauser E. Farrow R.F., Parkin S.S.P., Dobson P.J., Neave J.H., Arrott A.S. Thin Films Growth Techniques for Low-dimensional Structures. 1987;171 Plenum, New York.
5. Nishinaga T. Cryst. Properties Prep. 31:1991;92.
6. Zytkiewicz Z.R. Cryst. Res. Technol. 34:1999;573.
7. Beaumont B., Vennegues Ph., Gibart P. Phys. Stat. Sol. (b). 227:2001;1.
8. Hiramatsu K. J. Phys.: Condens. Matter. 13:2001;6961.
9. Zytkiewicz Z.R. Thin Solid Films. 412:2002;64.
10. Nishinaga T. J. Crystal Growth. 237-239:2002;1410.
11. Kayser O., Westphalen R., Opitz B., Balk P. J. Crystal Growth. 112:1991;111.
12. Greenspan J.E., Blaauw C., Emmerstorfer B., Glew R.W., Shih I. J. Crystal Growth. 248:2003;405.
13. Mitchel C.C., Coltrin M.E., Han J. J. Crystal Growth. 222:2001;144.
14. Thrush E.J., Stagg J.P., Gibbon M.A., Mallard R.E., Hamilton B., Jowett J.M., Allen E.M. Mater. Sci. Eng. B. 21:1993;130.
15. Alam M.A., People R., Isaacs E., Kim C.Y., Evans-Lutterodt K., Siegrist T., Pernell T.L., Vandenberg J., Sputz S.K., Chu S., Lang D.V., Smith L., Hybertsen M.S. Appl. Phys. Lett. 74:1999;2617.
16. Zybura M.F., Jones S.H. J. Electron. Mater. 23:1994;1055.
17. Coronell D.G., Jensen K.F. J. Crystal Growth. 114:1991;581.
18. Fujii T., Ekawa M., Yamazaki S. J. Crystal Growth. 146:1995;475.
19. Khenner M., Braun R.J., Mauk M.G. J. Crystal Growth. 235:2002;425.
20. Khenner M., Braun R.J., Mauk M.G. J. Crystal Growth. 241:2002;330.
21. Yan Z., Naritsuka S., Nishinaga T. J. Crystal Growth. 209:2000;1.
22. Sakai S., Ohashi Y., Shintani Y. J. Appl. Phys. 70:1991;4899.
23. Mauk M.G., Curran J.P. J. Crystal Growth. 225:2001;348.
24. Dobosz D., Zytkiewicz Z.R., Piotrowski T.T., Kaminska E., Papis E., Piotrowska A. Cryst. Res. Technol. 38:2003;297.
25. Bryskiewicz T. Prog. Cryst. Growth Charact. 12:1986;29.
26. Djilali N., Qin Z., Dost S. J. Crystal Growth. 149:1995;153.
27. Dost S., Erbay H.A. Int. J. Eng. Sci. 33:1995;1385.
28. Kimura M., Djilali N., Dost S. J. Crystal Growth. 143:1994;334.
29. Qin Z., Dost S. Int. J. Electromag. Mech. 7:1996;129.
30. Silier I., Gutjahr A., Nagel N., Hansson P.O., Czech E., Konuma M., Bauser E., Banhart F., Kohler R., Raidt H., Jenichen B. J. Crystal Growth. 166:1996;727.
31. Randolph A.D., Larson M.A. Theory of Particulate Processes, Academic Press. 1971;New York.
32. Scorzoni A., Finetti M. Mat. Sci. Rep. 3:1988;79.
33. Okamoto A., Isozumi S., Lagowski J., Gatos H.C. J. Electrochem. Soc. 129:1982;2095.