Process control for low temperature reactive deposition of Al doped ZnO films by ICP-assisted DC magnetron sputtering

Surface and Coatings Technology

Volumn 200, Issue 1-4 SPEC. ISS., 2005, Pages 862-866

  Jung, S J ^a   Koo, B M ^a   Han, Y H ^a   Lee, J J ^a   Joo, J H ^b  

^a Seoul National University   (South Korea)

^b Kunsan National University   (South Korea)

Author keywords

Al doped ZnO; ICP; Reactive sputtering; Target voltage control

Indexed keywords

ALUMINUM; ARGON; DEPOSITION; ELECTRIC CONDUCTIVITY; FILMS; INDUCTIVELY COUPLED PLASMA; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; OPACITY; OXYGEN; VOLTAGE CONTROL;

ALUMINUM DOPED ZINC OXIDE; REACTIVE SPUTTERING; TARGET VOTAGE CONTROL;

ZINC OXIDE;

COATING;

EID: 24644510257     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2005.02.207     Document Type: Article

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