Stability of hot-wire deposited amorphous-silicon thin-film transistors

Applied Physics Letters

Volumn 69, Issue 8, 1996, Pages 1062-1064

  Meiling, H ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000614106     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116931     Document Type: Article

References (7)

1. Amorphous and Microcrystalline Semiconductor Devices, edited by J. Kanicki (Artech House, Norwood, MA, 1991).
2. Plasma Deposition of Amorphous Silicon-Based Materials, edited by G. Bruno, P. Capezzuto, and A. Madan (Academic, Boston, MA, 1995).
3. A. H. Mahan, J. Carapella, B. P. Nelson, R. S. Crandall, and I. Balberg, J. Appl. Phys. 69, 6782 (1991).
4. R. S. Crandall, A. H. Mahan, B. P. Nelson, M. Vanecek, and I. Balberg, AIP Conf. Proc. 268, 81 (1992).
5. E. Iwaniczko, B. P. Nelson, E. C. Molenbroek, R. E. I. Schropp, R. S. Crandall, and A. H. Mahan, AIP Conf. Proc. 306, 458 (1993).
6. A. Madan, P. Rava, R. E. I. Schropp, and B. Von Roedern, Appl. Surf. Sci. 70/71, 716 (1993).
7. R. E. I. Schropp, K. F. Feenstra, C. H. M. van der Werf, J. Holleman, and H. Meiling, in Amorphous Silicon Technology-1996, edited by E. A. Schiff, M. J. Thompson, A. Madan, K. Tanaka, and R. E. I. Schropp (Materials Research Society, Pittsburgh, in press).