LER as structural fluctuation of resist reaction and developer percolation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 I, Issue , 2002, Pages 158-168

  Fukuda, Hiroshi ^a   Yamaguchi, Atsuko ^a  

^a HITACHI LTD   (Japan)

Author keywords

Chemically amplified resist (CAR); Diffusion; Dissolution; Dissolution rate; Line edge roughness (LER); Percolation; Polymer; Reaction

Indexed keywords

ACIDS; CATALYSIS; COMPUTER SIMULATION; DIFFUSION; PERCOLATION (SOLID STATE); SHOT NOISE;

LINE EDGE ROUGHNESS (LER);

PHOTORESISTS;

EID: 0036413377     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474519     Document Type: Conference Paper

References (6)

1. Semiconductor Industry Association, The International Technology Roadmap for Semiconductor, 2001ed.
2. C.H. Diaz, et al., IEEE EDL-22 (2001) 287-289.
3. T. Yoshimura, et al., JJAP 32 (1993) 6065-6070.
4. T. Odagaki, Introduction to percolation theory, Shokabo, Tokyo, in Japanese (1993).
5. A. Yamaguchi, et al., JJAP vol. 38 (1999) 4033-4040.
6. T. Azuma, et al., SPIE vol. 3999 (2000) 264-269.