Implantation temperature dependent deep level defects in 4H-SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 443-446

  Aberg D ^a   Storasta, L ^b   Hallen A ^a   Svensson, B G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; HEAT TREATMENT; ION IMPLANTATION; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

CONDUCTION BAND EDGE;

SILICON CARBIDE;

EID: 14344269806     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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