Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films

Microelectronics Journal

Volumn 35, Issue 7, 2004, Pages 571-576

  Zhou, H ^a   Shi, F G ^a   Zhao, B ^b   Yota, J ^b  

^a University of California at Irvine   (United States)

^b SKYWORKS SOLUTIONS INC   (United States)

Author keywords

Conduction mechanism; Deposition methods; Dielectric breakdown strength; Low k dielectric; Plasma enhanced chemical vapor deposition; Temperature dependent; Thickness dependent; Time dependent

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; INTERMETALLICS; SEMICONDUCTOR MATERIALS; THERMAL CYCLING; THICKNESS MEASUREMENT; THIN FILMS;

CONDUCTION MECHANISM; DEPOSITION METHODS; DIELECTRIC BREAKDOWN STRENGTH; LOW-K DIELECTRICS; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; TEMPERATURE DEPENDENT; THICKNESS DEPENDENT; TIME DEPENDENT;

SILICA;

EID: 2442593562     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.03.004     Document Type: Article

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