Optical properties of PECVD dielectric thin films: Thickness and deposition method dependence

Microelectronics Journal

Volumn 33, Issue 11, 2002, Pages 999-1004

  Zhou, H ^a   Kim, H K ^a   Shi, F G ^a   Zhao, B ^b   Yota, J ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Rockwell Semiconductor Systems   (United States)

Author keywords

Plasma enhanced chemical vapor deposition; Refractive index; Temperature dependence; Thickness dependence

Indexed keywords

DIELECTRIC FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTOR DOPING;

OPTICAL WAVEGUIDE MATERIALS;

THIN FILMS;

EID: 0036857969     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(02)00065-4     Document Type: Conference Paper

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