A leakage reduction methodology for distributed MTCMOS

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 5, 2004, Pages 818-826

  Calhoun, Benton H ^a   Honoré, Frank A ^a   Chandrakasan, Anantha P ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Active leakage; Fine grain leakage reduction; Leakage reduction; MTCMOS; Sleep regions; Sneak leakage

Indexed keywords

COMBINATORIAL CIRCUITS; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; POWER ELECTRONICS; SEQUENTIAL CIRCUITS; VLSI CIRCUITS;

ACTIVE LEAKAGE; FINE GRAIN LEAKAGE REDUCTION; SLEEP REGIONS; SNEAK LEAKAGE;

CMOS INTEGRATED CIRCUITS;

EID: 2442466161     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.826335     Document Type: Article

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