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Volumn 109, Issue 32, 2005, Pages 15391-15396

Gating of enhanced electron-charging thresholds in self-assembled nanoparticle films

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATION; ELECTRONS; INTERPOLATION; NITROGEN COMPOUNDS; SELF ASSEMBLY; SEMICONDUCTOR DEVICES; THIN FILMS;

EID: 24344481995     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp051282y     Document Type: Article
Times cited : (14)

References (39)
  • 24
    • 24344510390 scopus 로고    scopus 로고
    • note
    • In Figure 2b, there is a ±0.01% spread in curves at -1.75 V. This is at the limit of resolution of our instrumentation.
  • 35
    • 24344466455 scopus 로고    scopus 로고
    • note
    • A tendency of activation energy to saturate in Figure 4c could be due to film-electrode contact. We observed metallic temperature dependence (down to 77 K) for sufficiently thick films only when electrodes were deposited on top of films. For samples considered in Figure 4, electrodes were deposited before NP film self-assembly.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.