1/f noise in Langmuir-Blodgett films on silicon

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 453-458

  Malik, S ^a   Ray, A K ^b   Bruce, S ^c  

^a SULTAN IDRIS EDUCATION UNIVERSITY   (Malaysia)

^b QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^c Ymergatan 26C   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCIES; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; SILICON; SPURIOUS SIGNAL NOISE; STEARIC ACID;

LOW-FREQUENCY NOISE; METAL-INSULATOR-SEMICONDUCTOR (MIS); NOISE FREQUENCIES;

LANGMUIR BLODGETT FILMS;

EID: 24144499928     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/022     Document Type: Article

References (35)

1. Petty M C 2002 Application of organised molecular films to electronic and opto-electronic devices Studies in Interface Science, Organized Monolayers and Assemblies: Structure, Process and Function ed D Mobius and R Miller (Amsterdam: Elsevier)
2. Jung G Y, Pearson C, Horsburgh L E, Samuel I D W, Monkman A P and Petty M C 2000 J. Phys. D: Appl. Phys. 33 1029-35
3. Kolliopoulou S, Dimitrakis P, Normand P, Zhang H L, Cant N, Evans S D, Paul S, Pearson C, Molloy A, Petty M C and Tsoukalas D 2003 J. Appl. Phys. 94 5234-9
4. Paul S, Pearson C, Molloy A, Cousins M, Green M, Kolliopoulou S, Dimitrakis P, Normand P, Tsoukalas D and Petty M C 2003 Nano Lett. 3 533-6
5. Malik S, Ray A K, Hassan A K and Nabok A V 2003 IEEE Trans. Nanotechnol. 2 149-53
6. Tredgold R H and Winter C S 1981 J. Phys. D: Appl. Phys. 14 L185-8
7. Nathoo M H and Jonscher A K 1971 J. Phys. C: Solid State Phys. 4 L301-4
8. Sugi M 1985 J. Mol. Electron. 13-17
9. Jones B K 2002 IEE Proc. Circuits Devices Syst. 149 13-22
10. Vandamme L K J 1994 IEEE Trans. Electron Devices 41 2176-87
11. Celik-Butler Z and Hsiang T Y 1987 Solid-State Electron. 30 419-23
12. Angelis C T, Dimitriadis C A, Samaras I, Brini J, Kamarinos G, Gueorguiev V K and Ivanov T E 1997 J. Appl. Phys. 82 4095-101
13. Song I H, Kim C H, Nam W J and Han M K 2002 Curr. Appl. Phys. 2 225-8
14. Necliudov P V, Rumyantsev S L, Shur M S, Gundlach D J and Jackson T N 2000 J. Appl. Phys. 88 5395-9
15. Johanson R E, Scansen D and Kasap S O 1996 Phil. Mag. B 73 707-14
16. Van Der Ziel A 1976 Noise in Measurements (New York: Wiley) p 41
17. Chand S and Kumar J 1996 J. Appl. Phys. 80 288-94
18. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
19. Streetman B and Banerjee S 2000 Solid State Electronic Devices 5th edn (Lebanon, IN: Prentice Hall)
20. Mott N F and Davis E A 1979 Electronic Processes in Noncrystalline Materials 2nd edn (Oxford: Clarendon)
21. Hooge F N, Kleinpenning T G M and Vandmme L K J 1981 Rep. Prog. Phys. 44 479-532.
22. Dutta P and Horn P M 1981 Rev. Mod. Phys. 53 497-516
23. Blecher K, Seibel K and Bohm M 1998 MRS Spring Meeting (San Francisco, 13-7 Apr.)
24. Wieczorek H 1995 J. Appl. Phys. 77 3300-7
25. Bruschi P, Nannini A, Serra G and Stussi E 1996 Thin Solid Films 289 242-9
26. Chen X Y, Deen M J and Peng C X 2000 J. Appl. Phys. 88 6746-51
27. Martin S, Dodabalapur A, Bao Z, Crone B, Katz H E, Li W, Passner A and Rogers J A 2000 J. Appl. Phys. 87 3381-5
28. Marshall W and Leach J R 1994 Proc. IEEE 82 1515-38
29. Kim Y S, Yun S S, Park C H, Min H S and Park Y J 2004 Solid-State Electron. 48 641-54
30. Kleipenning T G M 1980 Physica B 98 289-99
31. Chen X Y, Pedersen A, Helleso O G and Rheenen van A D 2000 Microelectron. Reliab. 40 1925-8
32. Nabok A V, Iwantono B, Hassan A K, Ray A K and Wilkop T 2002 Mater. Sci. Eng. C 22 355-8
33. Tassis D H, Dimitriadis C A, Brini J, Kamarinos G and Birbas A 1999 J. Appl. Phys. 85 4091-5
34. Faria R M and Oliveira O N 1999 Braz. J. Phys. 29 360-70
35. Hastas N A, Dimitriadis C A, Panayiotatos Y, Tassis D H and Patsalas P 2000 J. Appl. Phys. 88 5482-4