RFCV test structure design for a selected frequency range

IEICE Transactions on Electronics

Volumn E88-C, Issue 5, 2005, Pages 817-822

  Jeamsaksiri, Wutthinan ^a   Mercha, Abdelkarim ^a   Ramos, Javier ^a   Decoutere, Stefaan ^a   Cubaynes, Florence ^b  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Capacitance; CV; Gate dielectric; Impedance; MOSFET; Nitride; Oxide; RF; S parameters

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC IMPEDANCE; GATES (TRANSISTOR); MATHEMATICAL MODELS; MOS DEVICES; NITRIDES; OXIDES; PROBLEM SOLVING;

CV; GATE DIELECTRICS; IMPEDANCE; RF; S-PARAMETER;

NATURAL FREQUENCIES;

EID: 24144480035     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: 10.1093/ietele/e88-c.5.817     Document Type: Conference Paper

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