Ge2Sb2Te5 thin film doped with silver

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 B, 2003, Pages 1026-1028

  Lie, Chao Te ^a   Kuo, Po Cheng ^a   Hsu, Wei Chih ^a   Wu, Ting Hao ^a   Chen, Po Wei ^a   Chen, Sheng Chi ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b DE LIN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

(Ge2Sb2Te5)100 x Agx Film; Crystalline temperature; Crystallization activity energy; Optical properties; Phase transition temperature

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; CRYSTALLIZATION; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; PHASE TRANSITIONS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; TEMPERATURE; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE TEMPERATURE; GERMANIUM ANTIMONY TELLURIDE ALLOYS; LASER WAVELENGTH RECORDING;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0037722680     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1026     Document Type: Article

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