Electronic properties of nanocrystalline-si embedded in asymmetric ultrathin SiO2 by in-situ fabrication technique

Chinese Physics Letters

Volumn 22, Issue 3, 2005, Pages 733-736

  Wu, Liang Cai ^a   Chen, Kun Ji ^a   Yu, Lin Wei ^a   Dai, Min ^a   Ma, Zhong Yuan ^a   Han, Pei Gao ^a   Li, Wei ^a   Huang, Xin Fan ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; FABRICATION; HYDROGEN; NANOCRYSTALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA;

ANNEALED SAMPLES; DOT DENSITY; FABRICATION TECHNIQUE; HYDROGEN DILUTED SILANE; IN-SITU FABRICATION; LOWS-TEMPERATURES; NANOCRYSTALLINE SI; PLASMA OXIDATION; SIO 2 LAYER; ULTRA-THIN;

ELECTRONIC PROPERTIES;

EID: 24144442131     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/3/059     Document Type: Article

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