Properties of amorphous silicon-germanium films and devices deposited at higher growth rates

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 515-520

  Liu, Yong ^a   Dalal, Vikram L ^a  

^a Iowa State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; AMORPHOUS MATERIALS; DENSITY (OPTICAL); ELECTRON CYCLOTRON RESONANCE; ELECTRON MOBILITY; ENERGY GAP; FILM GROWTH; MIXTURES; PHOTOCONDUCTIVITY;

AMORPHOUS SILICON GERMANIUM DEVICES; AMORPHOUS SILICON GERMANIUM FILMS; BANDGAP; SPACE CHARGE LIMITED CURRENT TECHNIQUES;

SILICON ALLOYS;

EID: 0036918656     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-715-a18.3     Document Type: Article

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