Electronic structure and light induced degradation of amorphous silicon-germanium alloys

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 572-576

  Zhong, Fan ^a   Chen, Chih Chiang ^a   Cohen, J David ^a  

^a UNIVERSITY OF OREGON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; DEFECTS; DEGRADATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; FERMI LEVEL; GLOW DISCHARGES; RELAXATION PROCESSES; SILICON ALLOYS;

AMORPHOUS SILICON GERMANIUM ALLOYS; CARRIER TRAP DISTRIBUTION; ELECTRON THERMAL EMISSION; LIGHT INDUCED DEGRADATION; RELAXATION EFFECT; SUB BAND GAP SPECTROSCOPY;

AMORPHOUS ALLOYS;

EID: 0030563415     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00766-0     Document Type: Article

References (9)

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