Extremely high-rate deposition of silicon thin films prepared by atmospheric plasma CVD method with a rotary electrode

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1552-1555

  Matsumoto, Mitsuhiro ^a,b   Shima, Masaki ^b   Okamoto, Shingo ^b   Murata, Kenji ^b   Tanaka, Makoto ^b   Kiyama, Seiichi ^b   Kakiuchi, Hiroaki ^a   Yasutake, Kiyoshi ^a   Yoshii, Kumayasu ^a   Endo, Katsuyoshi ^a   Mori, Yuzo ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAS FLOW; PHOTOVOLTAIC LAYERS; ROTARY ELECTRODES;

ATMOSPHERIC PRESSURE; DEPOSITION; ELECTRODES; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SOLAR CELLS;

THIN FILMS;

EID: 6344253190     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. 2) a-Si/a-SiGe tandem solar cells using high-rate deposition ", Sol. Energy. Mater. Sol. Cell 74, (2002) 339.
2. th International Precision Engineering Seminar, (1993) 554.
3. Y. Mori, K. Yoshii, K. Hirose, K. Yasutake, K. Endo, Y. Domoto, H. Tarui, S. Kiyama, and H. Kakiuchi, " Atmospheric pressure plasma chemical vapor deposition of amorphous silicon films with high growth rate ", 1996, The Japan-China Bilateral Symposium on Advanced Manufacturing Engineering, (1996) 84.
4. Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, Y. Domoto, H. Tarui, and Seiichi Kiyama, " High-rate deposition of amorphous Si thin films by atmospheric pressure plasma CVD ", Precision Science and Technology for Perfect Surfaces, (1999) 537.