Defect effect on electrical transport of multiwalled carbon nanotubes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 4245-4247

  Hsiou, Yu Feng ^a   Chen, Chiidong ^b   Chan, Ching Hsu ^c   Stobinski, Leszek ^b   Yang, Ying Jay ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

^c ST JOHN'S UNIVERSITY   (Taiwan)

Author keywords

Carbon nanotube; Coulomb blockade; Defect; Multiwalled carbon nanotube; Tunneling barriers

Indexed keywords

COMPUTER SIMULATION; COULOMB BLOCKADE; DEFECTS; ELECTRODES; ELECTRON TUNNELING; TRANSPORT PROPERTIES;

LOW TEMPERATURES; LOW-OHMIC CONTACT; MULTIWALLED CARBON NANOTUBES; TUNNELING N\BARRIERS;

CARBON NANOTUBES;

EID: 23944520802     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.4245     Document Type: Article

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