Quantum Dot Formation in Single-Wall Carbon Nanotubes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 1915-1917

  Suzuki, M ^a,c   Ishibashi, K ^a   Ida, T ^b   Aoyagi, Y ^b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOYO UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Carbon nanotube; Coulomb blockade; Quantum dot; Stochastic Coulomb blockade; SWNTs

Indexed keywords

CARBON NANOTUBES; COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; OSCILLATIONS; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

MULTI-QUANTUM DOTS; SINGLE-WALL NANOTUBES (SWNT); STOCHASTIC COULOMB BLOCKADES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035267664     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1915     Document Type: Article

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