SCOPUS 정보 검색 플랫폼

Volumn 84, Issue 6, 2004, Pages 984-986

Controlled placement and electrical contact properties of individual multiwalled carbon nanotubes on patterned silicon chips

(5) Hsiou, Y F a,d Yang, Y J a Stobinski, L b Kuo, Watson c,d Chen, C D d

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INSTITUTE OF PHYSICAL CHEMISTRY (Poland)

c NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

d INSTITUTE OF PHYSICS (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHROMIUM; CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ENERGY GAP; MAGNETIC FIELD EFFECTS; SCANNING ELECTRON MICROSCOPY; SILICON; THERMAL EFFECTS;

MULTIWALLED CARBON NANOTUBES; PATTERNED SILICON CHIPS;

CARBON NANOTUBES;

EID: 1542276783 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1645985 Document Type: Article

Times cited : (28)

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