High-sensitivity InP/InGaAs DHBT decision circuit-design and application in optical and system experiments at 40-43 Gbit/s

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 4 I, 2005, Pages 1228-1234

  Konczykowska, Agnieszka ^a   Jorge, Filipe ^a   Idler, Wilfried ^b   Godin, Jean ^a  

^a OPTO+   (France)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

Bipolar integrated circuits (ICs); Decision circuit; Electrical time division multiplex (ETDM); Flip flops; Indium compounds; Photoreceiver; Very high speed ICs

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM COMPOUNDS; LIGHT TRANSMISSION; OPTICAL PROPERTIES; OSCILLATIONS; SENSITIVITY ANALYSIS; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; TIME DIVISION MULTIPLEXING;

BIPOLAR INTEGRATED CIRCUITS (ICS); DECISION CIRCUIT; ELECTRICAL TIME-DIVISON MULTIPLEX (ETDM); FLIP-FLOPS; PHOTORECEIVERS; VERY HIGH-SPEED ICS;

FLIP FLOP CIRCUITS;

EID: 18744403447     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.845712     Document Type: Article

References (12)

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