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Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 110-113

Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN

(8) Iwaya, M a Takanami, S a Miyazaki, A a Kawashima, T a Iida, K a Kamiyama, S a Amano, H a Akasaki, I a

a MEIJO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; EPITAXIAL GROWTH; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET DEVICES;

ALUMINUM GALLIUM NITRIDE; EPITAXIAL LATERAL OVERGROWTH; LIGHT EXTRACTION EFFICIENCY; SPREAD INJECTION CURRENT;

LIGHT EMITTING DIODES;

EID: 0347516481 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200303504 Document Type: Article

Times cited : (5)

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