Tunnel DCIV extraction of dopant-impurity concentration, oxide thickness, and length in the channel and extension regions of ultrathin gate-oxide MOS transistors

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1548-1554

  Jie, Bin B ^a   Sah, Chih Tang ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Channel length; Extension length; Oxide thickness; Surface dopant impurity concentration; Tunnel direct current current voltage (TDCIV); Ultrathin gate oxide

Indexed keywords

ALGORITHMS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS;

CHANNEL LENGTH; EXTENSION LENGTH; OXIDE THICKNESS; SURFACE DOPANT IMPURITY CONCENTRATION; TUNNEL DIRECT CURRENT CURRENT-VOLTAGE (TDCIV); ULTRATHIN GATE OXIDE;

MOSFET DEVICES;

EID: 23944502117     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850623     Document Type: Article

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