Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors

Semiconductor Science and Technology

Volumn 19, Issue 7, 2004, Pages 870-876

  Jie, Bin B ^a,b   Lo, K F ^a   Quek, Elgin ^a   Chu, Sanford ^a   Sah, Chih Tang ^b  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SEPARATION; CURRENT-VOLTAGE METHOD; TUNNELLING CURRENT;

BIPOLAR TRANSISTORS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; MOS DEVICES; MOSFET DEVICES; PARAMETER ESTIMATION;

GATES (TRANSISTOR);

EID: 3142674984     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/7/016     Document Type: Article

References (15)

1. Neugroschel A, Sah C-T, Han K M, Carroll M S, Nishida T, Kavalieros J T and L Lu 1995 IEEE Trans. Electron Devices 42 1380-3
2. Sah C-T 2001 Proc. 6th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT) (Shanghai) vol 1 pp 1-15
3. Park M-S and Wie C R 2001 IEEE Trans. Nucl. Sci. 48 2285-93
4. Sah C-T 1999 Semi. Research Corp. Report No C99429 1-50
5. Sah C-T 1999 Semi. Research Corp. Report No C99431 1-77
6. Ginovker A S, Gristsenko V A and Sinitsa S P 1974 Phys. Status Solidi a 26 489
7. Eitan B and Kolodny A 1983 Appl. Phys. Lett. 43 106
8. Schuegraf K F and Hu C 1994 IEEE Trans. Electron Devices 41 761-7
9. Guan H, Li M-F, He Y, Cho B J and Dong Z 2000 IEEE Trans. Electron Devices 47 1608-16
10. Shi Y, Ma T P, Prasad S and Dhanda S 1998 IEEE Trans. Electron Devices 45 2355-60
11. Lee W-C, King T-J and Hu C 1999 IEEE Electron Device Lett. 20 268-70
12. Sah C-T 1999 Semi. Research Corp. Report No C99430 1-35
13. Cao K M, Lee W-C, Liu W, Jin X, Su P, Fung S K H, An J X, Yu B and Hu C 2000 IEDM Technical Digest (Piscataway, NJ:IEEE) pp 815-8
14. Cai J and Sah C-T 2001 J. Appl. Phys. 89 2272-85
15. Walstra S V and Sah C-T 1997 IEEE Trans. Electron Devices 44 1136-42