Precise thermal characterization of confined nanocrystalline silicon by 3ω method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 4084-4087

  Kihara, Takashi ^a   Harada, Toshihiro ^a   Koshida, Nobuyoshi ^b  

^a YAMATAKE CORPORATION   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

3 method; Heat capacity; Nanocrystalline silicon; Thermal conductivity; Ultrasound emitter

Indexed keywords

ANODIC OXIDATION; CRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; POROSITY; QUANTUM THEORY; SINGLE CRYSTALS; SPECIFIC HEAT; THERMAL CONDUCTIVITY;

3Ω METHOD; NANOCRYSTALLINE SILICON; ULTRASOUND EMITTER;

SEMICONDUCTING SILICON;

EID: 23944479696     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.4084     Document Type: Article

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