Transient and stationary characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2588-2590

  Migita, Tatsuo ^a   Shinoda, Hiroyuki ^b   Koshida, Nobuyoshi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Nanocrystalline silicon; Porous silicon; Thermoacoustic effect; Ultrasonic emission

Indexed keywords

ACOUSTIC EMISSIONS; NANOSTRUCTURED MATERIALS; PHONONS; PHOTOACOUSTIC EFFECT; ULTRASONIC EFFECTS;

ACOUSTIC PRESSURE; NANOCRYSTALLINE SILICON; ULTRASONIC EMISSION;

POROUS SILICON;

EID: 0038591999     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2588     Document Type: Article

References (4)

1. N. Koshida, T. Nakajima, M. Yoshiyama, K. Ueno, T. Nakagawa and H. Shinoda: Mater. Res. Soc. Symp. Proc. 536 (1999) 105.
2. H. Shinoda, T. Nakajima, K. Ueno and N. Koshida: Nature 400 (1999) 853.
3. W. Lang: Thermal conductivity of porus silicon, in EMIS Data Review Series No. 18 "Properties of Porous Silicon", ed. L. Canham (IEE, London, 1997) pp. 138-141.
4. N. Koshida, T. Migita, Y. Kishimoto, M. Fuchigami and H. Shinoda: Proc. Int. ECS Symp. on Pits and Pores II: Formation, Properties, and Significance for Advanced Materials, Phoenix, 2000, ECS Proc. Vol. 2000-25, eds. P. Schmuki, D. J. Lockwood, Y. H. Ogata and H. S. Issacs (Electrochem. Soc., Pennington, 2001) pp. 326-332.