New substrate engineering for the formation of Empty Space in Silicon (ESS) induced by silicon surface migration

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 517-520

  Sato, Tsutomu ^a   Aoki, Nobutoshi ^a   Mizushima, Ichiro ^a   Tsunashima, Yoshitaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACIAL ENERGY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE PHENOMENA; TRANSMISSION ELECTRON MICROSCOPY;

EMPTY SPACE IN SILICON; SILICON SURFACE MIGRATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0033306998     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)